Semiconductor device, method of fabricating the same, and sputtering apparatus
US5903023A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Feb 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.