Semiconductor integrated circuit
US5903178A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and the first and second signal terminals, respectively. A control terminal is connected to at least one of the source/drain via a second resistor. High frequency signals supplied through the first signal terminal is sent through the field-effect transistor and outputted through the second signal terminal, and a quantity of the transmitted high frequency signals is controlled by a control voltage signal applied across the first and second control terminals. This structure provides a high frequency semiconductor integrated circuits which reduces a power consumption and an occupied area, increases a switchable power, suppresses output distortion, and simplifies a peripheral circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.