Photoelectric sensor, information recording system and information recording and reproducing method
US5903296A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Jun 5, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B11/08
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric sensor having a photoconductive layer on an electrode and used to form information on an information recording medium. The photoelectric sensor is semiconductive and has such a function that when a voltage is applied between the electrode of the photoelectric sensor and an electrode of the information recording medium while information exposure is being carried out, or when information exposure is carried out with a voltage being applied between the two electrodes, information can be recorded on the information recording medium with an electric current amplified to a level higher than the intensity of a photoelectric current induced by the information exposure, and that even after termination of the information exposure, when the voltage is continuously applied, the photoelectric sensor shows electrical conductivity and continuously effects information recording to the information recording medium. The photoelectric sensor has a photo-induced current amplifying layer provided between the electrode and the photoconductive layer, thereby enabling an image free from unevenness and noise to be formed with high sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.