Stress compensation type semiconductor laser
US5903587A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 9, 1998 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Mar 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stress compensation type semiconductor laser emitting laser light of 0.98 .mu.m.about.1.02 .mu.m wavelength includes a semiconductor substrate, a cladding layer disposed on the semiconductor substrate, and a multiple quantum well structure active layer disposed on the cladding layer and comprising a plurality of well layers and barrier layers. In the laser, when the number, strain, and thickness of the well layers are n, f.sub.w, and t.sub.w, respectively, and the number, strain, and thickness of the barrier layers are m, f.sub.b, and t.sub.b, respectively, the average strain f.sub.av of the well layers and the barrier layers, and the total thickness t.sub.total of the well layers and the barrier layers is given by ##EQU1## where .upsilon. is the Poisson ratio, b.sub.o is the magnitude of a Burgers vector of a perfect dislocation, b.sub.p is the magnitude of a Burgers vector of partial dislocation, and r.sub.c is the half loop radius of a dislocation. Therefore, an active layer having required stress compensation performance is realized with high reliability and high reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.