Magneto-resistance effect device with improved thermal resistance
US5903708A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1995 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | May 30, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y25/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.