Method of resistless patterning of a substrate for implantation
US5904552A · kind A · utility
9Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1997 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of ion implanting a substrate is disclosed, which includes providing a substrate having a surface. A sacrificial layer of semiconductor material is formed on the surface and resistlessly patterning to define masked and unmasked portions. The unmasked portions are etched away to form an implantation mask on the substrate. Ions are implanted in the substrate underlying the etched away unmasked portions and the sacrificial layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.