Silicon-germanium-carbon compositions in selective etch processes

US5906708A · kind A · utility

Assignee

• Lawrence Semiconductor Research Laboratory, Inc. · US

Inventors

• McDonald Robinson · Paradise Valley, US
• Richard Westhoff · Hudson, US
• Charles E. Hunt · Davis, US
• Li Ling · Hong Kong, CN

Key dates

• Filing date: Dec 6, 1995
• Grant date: May 25, 1999
• Expiry date: Dec 6, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/15
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.