Method for etching high aspect-ratio multilevel contacts
US5906948A · kind A · utility
17Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1998 |
| Grant date | May 25, 1999 |
| Priority date | — |
| Expiry date | Apr 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching dielectric layers is disclosed. A first etch of the dielectric layers is performed with a gas chemistry comprising C.sub.4 F.sub.8 flowing at about 10 sccm to about 25 sccm and CH.sub.3 F flowing at about 5 sccm to about 20 sccm. A second etch of the dielectric layers is performed with the gas chemistry and flow rates of gases which are about 10% to about 40% greater than the flow rates of gases in the first etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.