Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US5907188A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1996 |
| Grant date | May 25, 1999 |
| Priority date | — |
| Expiry date | Aug 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, and a laminated film insulatively formed over the semiconductor substrate, wherein the laminated film includes a semiconductor film, a metal film of refractory metal formed on the semiconductor film, a conductive oxidation preventing film disposed between the metal film and the semiconductor film, for preventing oxidation of the semiconductor film in an interface between the metal film and the semiconductor film, and an oxide film formed on a side surface of the semiconductor film and formed to extend into upper and lower portions of the semiconductor film in a bird's beak form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.