Solid-state image pickup device
US5907356A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 26, 1997 |
| Grant date | May 25, 1999 |
| Priority date | — |
| Expiry date | Feb 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
In the solid-state image pickup device of the present invention, a two-layer structure of the second diffusion layer of the first conductive type and the third diffusion layer of the first conductive type that has a higher density is uniformly formed as an isolation area along a transfer channel between each photodiode string and each vertical CCD register. Therefore, a constant effective width for the transfer channel is provided and a preferable transfer efficiency is achieved. Further, the occurrence of a punch-through between the photodiode and the vertical CCD register can be prevented, isolation between the photodiode and the vertical CCD register can be ensured, and the reading of electric charges from the photodiode to the vertical CCD register can be performed at a lower voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.