Method of passivating a semiconductor substrate
US5908316A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1995 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating a semiconductor substrate includes singulating (13) a semiconductor substrate (23) from a semiconductor wafer, coupling (14) a heatsink (21) to the semiconductor substrate (23), etching (15) the semiconductor substrate (23) in a chamber of an etch tool, and passivating (17) the semiconductor substrate (23) with an oxide layer (31). The semiconductor substrate (23) is kept in the chamber of the etch tool from the etching (15) step through the passivating (17) step. The etching (15) of the semiconductor substrate (23) does not substantially etch the heatsink (21), and the passivating (17) of the semiconductor substrate (23) does not substantially passivate the heatsink (21).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.