Apparatus for producing semiconductor using aluminum nitride bodies as substrates
US5908799A · kind A · utility
13Cited by
17References
21Claims
0Family size
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Key dates
| Filing date | Sep 2, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Sep 2, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.