Vacuum-sealed field-emission electron source and method of manufacturing the same
US5909033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Nov 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.