Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane
US5909052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1995 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | May 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Prevention of reduction in the production yield due to the increase in the area of a semiconductor chip permits a sophisticated-performance single-chip semiconductor device to be fabricated. This also permits a many-kind small-amount production of semiconductor devices to be implemented. After plural semiconductor chips 2 and 3 are fabricated separately, only defect-free chips of them are selected. The selected defect-free chips are connected in contact between their side walls of their densest faces of atoms of their substrates so that the surfaces 4a and 4b where elements are to be formed are located in the same plane. Thus, even when the chip area is increased, reduction of the production yield can be prevented, thereby permitting a large-area sophisticated-performance single chip semiconductor device to be fabricated. If many kinds of semiconductor chips are prepared and connected in their combination in a variety of forms, it is possible to realize a many-kind small-amount production of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.