FETs logic circuit
US5909128A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0952
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit having a field effect transistor formed on a compound semiconductor is disclosed, that comprises a first power supply, a second power supply for supplying a voltage lower than a voltage that the first power supplies, and at least one virtual power supply that is not connected to the outside and that has a voltage between the voltage of the first power supply and the voltage of the second power supply, wherein the number of the virtual power supplies is designated to a value larger than the quotient of which the voltage between the first power supply and the second power supply is divided by the forward turn-on voltage of a gate electrode of the field effect transistor. In the case that a signal received from a circuit with a low voltage is connected to a circuit between any power supply, the signal is received by a directly coupled logic circuit with a depletion type field effect transistor as a drive circuit. The threshold voltage of the depletion type field effect transistor is -.DELTA.V or higher where .DELTA.V is the voltage between each power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.