High-side MOSFET gate protection shunt circuit
US5909135A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Dec 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-side MOSFET gate protection shunt circuit is provided for protecting an output driving transistor (10). The output driving transistor (10) is operable to drive a load (18) on an output node (12). A sense resistor (26) is disposed between the supply voltage terminal and the output node (12). The gate of transistor (10) is driven by a current limited driver (20). In order to prevent the voltage across the gate oxide of transistor (10) from exceeding a predetermined voltage above which would be destructive to the transistor, a bypass transistor (32) is disposed between the output of the MOSFET driver (14) and the supply terminal (11). The gate of this transistor (32) is connected to the output node (12), such that the voltage on the gate of transistor (10) is limited to one threshold voltage below the voltage on the output node (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.