Method of producing silicon layer having surface controlled to be uneven or even
US5910019A · kind A · utility
17Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1997 |
| Grant date | Jun 8, 1999 |
| Priority date | — |
| Expiry date | Apr 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.