Optical semiconductor device with InP
US5912475A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1996 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Dec 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06258
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.