Avalanche photodiode
US5912478A · kind A · utility
5Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
Abstract
An avalanche photodiode having an absorption zone, a multiplication zone, and a transition zone disposed between the absorption zone and the multiplication zone, the transition zone being doped and being constituted at least in part by a material of composition that is graded such that the energy bands of the structure are substantially continuous when it is biased, wherein said doping is distributed non-uniformly in said graded composition zone so as to compensate, at least in part, the reverse electric field due to the composition grading of the material in the transition zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.