Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
US5913100A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.