High voltage silicon carbide semiconductor device with bended edge
US5914499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Mar 5, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.