Power semiconductor structure with lateral transistor driven by vertical transistor
US5914522A · kind A · utility
5Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | May 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/409
Abstract
A power semiconductor structure (200), in particular in VIPower technology, made from a chip of N-type semiconductor material (110), comprising a bipolar or field-effect vertical power transistor (125, 120, 110) having a collector or drain region in such N-type material (110); the semiconductor structure comprises a PNP bipolar lateral power transistor (210, 110, 220) having a base region in such N-type material (110) substantially in common with the collector or drain region of the vertical power transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.