Multi-layered magneto-resistive thin film sensor
US5914597A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Sep 16, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The change rate of resistance in a multi-layered spin-valve magneto-resistive thin film using a FeMn anti-ferromagnetic layer has been improved. In multi-layered magento-resistive thin film having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer with an adjoining anti-ferromagnetic layer are laminated on a substrate; the magnetizing direction of each ferromagnetic layer lying in the film surface; the magnetizing direction of the second ferromagnetic layer being pinned by the magnetic exchange coupling field generated by the anti-ferromagnetic layer; and the magnetizing direction of the first ferromagnetic layer not being pinned, the degree of dispersion of lattice spacing, or lattice relaxations at the interface of the second ferromagnetic layer and the anti-ferromagnetic layer is set to equal to or less than 0.5 A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.