Mitigation of CMP-induced BPSG surface damage by an integrated anneal and silicon dioxide deposition
US5915175A · kind A · utility
19Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Healing of scratches created during CMP is achieved by reflowing the material containing the scratches and then depositing a top layer of material. The deposition of the top layer further enhances the healing of the scratches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.