Raised source/drain using recess etch of polysilicon

US5915183A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jeffrey P. Gambino · Gresham, US
• Scott D. Halle · Slingerlands, US
• Jack A. Mandelman · Stormville, US
• Jeremy K. Stephens · New Windsor, US

Key dates

• Filing date: Jun 26, 1998
• Grant date: Jun 22, 1999
• Expiry date: Jun 26, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for forming raised source/drain junctions using CMP (Chemical Mechanical Polishing) combined with a recess etch of blanket polysilicon. The raised source/drains are defined by gate conductors and by raised STI (Shallow Trench Isolation) which also reduces leakage current through the devices and improves the threshold voltage control. The process uses a salicide gate conductor, and uses conventional polysilicon deposition, CMP, and recess steps to form the raised source/drain junctions, such that it is readily implemented in commercially feasible manufacturing processes.