Film forming method and semiconductor device manufacturing method
US5915200A · kind A · utility
315Cited by
2References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 24, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Apr 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.