Method of producing photoelectric conversion device
US5916375A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1998 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Apr 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention is directed to a method of manufacturing a photovoltaic cell with high conversion efficiency, wherein a polycrystal CdTe layer with a large grain size can be formed by forming an indium oxide film (20) on a transparent conductive substrate having a transparent conductive film (2) as its surface layer, then forming an n-type CdS layer (3) and a p-type CdTe layer (4) thereon, then attaching cadmium chloride (CdCl.sub.2) on the p-type CdTe layer, and then annealing. The indium oxide film (20) is capable of relaxing strain caused at an interface between the transparent conductive film (2) and the n-type CdS layer (3), so that a good CdS/CdTe junction interface can be formed. The indium oxide film (20) can be formed by forming an indium film on the transparent conductive substrate and then annealing in oxygen containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.