Method of etching a substrate by means of chemical beams
US5916822A · kind A · utility
7Cited by
6References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 8, 1996 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Aug 8, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.