Patent · US Expired

Compact ROM matrix

US5917224A · kind A · utility

34Cited by
4References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 2, 1997
Grant dateJun 29, 1999
Priority date
Expiry dateJun 2, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B20/00

Abstract

A matrix memory array includes a P-type semiconductor substrate, thick oxide columns separating active columns, gate rows, a gate insulator interposed at the locations where these rows cover the active columns, N-type islands limited by the thick oxide columns and the gate rows, first conductive columns at the pitch of the active columns, constituting bit lines, second conductive columns at a pitch which is twice that of the first columns, constituting reference lines, and connections between each island and a first or second conductive column.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.