Compact ROM matrix
US5917224A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Jun 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/00
Abstract
A matrix memory array includes a P-type semiconductor substrate, thick oxide columns separating active columns, gate rows, a gate insulator interposed at the locations where these rows cover the active columns, N-type islands limited by the thick oxide columns and the gate rows, first conductive columns at the pitch of the active columns, constituting bit lines, second conductive columns at a pitch which is twice that of the first columns, constituting reference lines, and connections between each island and a first or second conductive column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.