Sensor of the instant power dissipated in a power transistor
US5917382A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1996 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Oct 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/523
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A sensor of instantaneous power which is dissipated through a power transistor of the MOS type connected between the output terminal of a power stage and ground. It comprises a MOS transistor having its gate terminal connected to that of the power transistor, source terminal connected to ground, and drain terminal connected to a circuit node which is coupled to the output terminal by means of a current mirror circuit which includes a resistive element in its input leg. Connected to the circuit node is the base terminal of a bipolar transistor which is respectively connected, through a diode and a constant current generator between the output terminal and ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.