Deposition of dopant impurities and pulsed energy drive-in

US5918140A · kind A · utility

Assignee

• The Regents of the University of California · US

Inventors

• Paul Wickboldt · Walnut Creek, US
• Paul G. Carey · Mountain View, US
• Patrick Smith · San Ramon, US
• Albert R. Ellingboe · Malahide, IE

Key dates

• Filing date: Jun 16, 1997
• Grant date: Jun 29, 1999
• Expiry date: Jun 16, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.