Method for manufacturing semiconductor device
US5918148A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Sep 24, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device having a sharp step portion, a mask pattern to perform a patterning process of a photoresist layer is formed so that the dimension of the mask pattern is set to be larger than a design value of the corresponding wiring pattern only at a region where the thickness of the photoresist layer is different from that at a flat portion, and the mask pattern dimension at the flat portion which is away from the step portion is set to a design value of the corresponding wiring pattern. By using the mask pattern thus formed, the wiring dimension in the vicinity of the step portion can be prevented from becoming smaller than that at the flat portion under the condition that the wiring dimension of the design value can be obtained at the flat portion, so that the wirings can be formed according to the design value at any place containing the portion in the vicinity of the step portion and the flat portion. As a result, the reduction in product quality and yield due to the partial reduction in restoring level, a lag of timing, etc. can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.