Patent · US Expired

Vacuum microelectronic device and methodology for fabricating same

US5919070A · kind A · utility

19Cited by
27References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 16, 1996
Grant dateJul 6, 1999
Priority date
Expiry dateAug 16, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S3/0973
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A vacuum state microelectronic device comprising at least a cathode, an anode, and a grid, disposed in a cavity, and formed by the wafer bonding of two planar substrates. The technology permits multiple vacuum state microelectronic devices (vacuum tubes) to be arrayed on a single substrate in an integrated manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.