Optoelectronic devices using persistent photoconductivity
US5920409A · kind A · utility
5Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1996 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | May 31, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor that is suitably doped to exhibit the DX effect is irradiated with an optical beam of spatially varying intensity whereby localized regions of persistently higher conductivity and lower refractive index are created in the semiconductor where sufficient intensity of the beam was incident. The persistently higher conductive region can be used to bridge selected gaps in conductive paths on a support member use in memory device and the regions of lower refractive index can be used to providing guiding in a wave guide, to form high resolution gratings, or to form holograms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.