Faraday rotator with antireflection film
US5920420A · kind A · utility
10Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1997 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Jul 23, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/093
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Faraday rotator is formed of a bismuth-substituted iron garnet single crystal film on which an antireflection film is formed. The antireflection film includes first, second, and third layers. The first layer is a layer of silicon dioxide. The second layer is a layer of tantalum pentoxide. The third layer is a layer of silicon dioxide. The first, second, and third layers are formed in this order from the atmosphere side on the bismuth-substituted iron garnet single crystal film. The antireflection film may be formed on both of opposing surfaces of the single crystal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.