Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
US5920767A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.