Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
US5922212A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Jun 7, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.