Method for semiconductor processing using mixtures of HF and carboxylic acid
US5922624A · kind A · utility
20Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.