Trichromatic sensor

US5923049A · kind A · utility

Assignee

• Cohausz & Florack · DE

Inventors

• Markus Bohm · Birkenfeld, DE
• Helmut Stiebig · Niederzier, DE

Key dates

• Filing date: May 15, 1997
• Grant date: Jul 13, 1999
• Expiry date: May 15, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

The invention relates to a photo sensitive electronic component based on amorphous silicon and its alloys, comprising two, in respect to each other antiserially arranged, p-i-n or n-i-p or Schottky-contact structures, in which in each case the active layers are arranged in the normal way in the direction of light incidence, whereby in the area of the first structure in the direction of light incidence, the charge carriers generated by blue light are collected for a first (V1) voltage; and in the area of the second structure in the direction of light incidence, the charge carriers generated by red or green light are collected for a second (V2) or a third (V3) voltage, and whereby at least one of the two intrinsically conducting layers is constructed from two partial layers. The object of creating better spectral selectivity is achieved in that in the partial layer (I) which is in front in the direction of light incidence, a higher product from charge carrier mobility and life-time (.mu.-tau product); and in the partial layer (II) which is at the rear in the direction of light incidence, a lower product from charge carrier mobility and life-time (.mu.-tau product) is present, in such…