Aluminum gallium nitride heterojunction bipolar transistor
US5923058A · kind A · utility
8Cited by
10References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1997 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Feb 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.