Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO.sub.2 and devices employing same
US5923524A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Dec 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Applicant has discovered that the dielectric constant of Ta.sub.2 O.sub.5 can be significantly enhanced by the addition of small quantities of TiO.sub.2. Specifically, if Ta.sub.2 O.sub.5 is doped with more than about 3 mole percent of TiO.sub.2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta.sub.2 O.sub.5 :0.08TiO.sub.2, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.