Patent · US Expired

Method for producing layer-structured perovskite thin film of bismuth-based compounds having ferroelectric properties

US5925183A · kind A · utility

6Cited by

2References

3Claims

0Family size

Assignee

Japan as represented by Director General of the Agency of Industrial Science and Technology · JP

Inventors

Kazumi Kato · Miyoshi, JP
Sandwip Dey · Tempe, US

Key dates

Filing date	Feb 11, 1998
Grant date	Jul 20, 1999
Priority date	—
Expiry date	Feb 11, 2018

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC07F9/94
WIPO fieldOrganic fine chemistry
WIPO sectorChemistry

Abstract

The present invention relates to a method for producing an Sr--Bi--Ta or Nb-based composite alkoxide with the structure of an atomic arrangement controlled, having a metal atomic ratio of Sr:Bi:Ta or Nb=1:2:2, characterized in that an Sr alkoxide (Sr(OR).sub.2) prepared from an Sr metal is allowed to react with a Bi alkoxide (Bi(OR).sub.3) in alcohol to produce an Sr--Bi double alkoxide (SrBi(OR).sub.4 !.sub.2), and subsequently the alkoxide is allowed to react with a Ta alkoxide (Ta(OR).sub.5) or an Nb alkoxide (Nb(OR).sub.5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.