Substrate bias generator for semiconductor integrated circuit device
US5929693A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 28, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Jan 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/215
Abstract
The semiconductor integrated circuit device can control the threshold voltage of MOSFETs at a low value while keeping the variation thereof at a small level in operation mode, but switches the threshold voltage thereof from the low value to a high value in standby mode. The semiconductor integrated circuit device comprises: a detecting circuit for detecting a physical quantity (e.g., substrate bias) of a semiconductor substrate and for outputting n-units (n.gtoreq.2) of first to n-th output signals decided according to a region to which the detected physical quantity belongs, the region being decided separately on the basis of n-units of the first to n-th set values; a control circuit for outputting drive signals on the bias of a control signal and the first to n-th output signals of the detecting circuit; a substrate potential generating circuit activated on the basis of one of the drive signals of the control circuit, to allow the substrate bias to be deep by pumping out charges from the semiconductor substrate; and a substrate charge injecting circuit activated on the basis of the other of the drive signals of the control circuit, to allow the substrate bias to be shallow by inj…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.