Non-volatile semiconductor memory device having trapped charges pulled out
US5930173A · kind A · utility
8Cited by
11References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 15, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3445
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of initializing a flash EEPROM, a pre-programming operation of a predetermined data is first performed in a plurality of memory cells of a memory cell array and then an erasing operation is performed to the plurality of memory cells. Then, a verifying operation of whether the erasing operation is correctly performed is performed. During an initializing operation composed of the pre-programming operation, the erasing operation and the verifying operation, electrons or holes trapped in a tunnel oxide film are pulled out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.