Diode laser device arranged in the form of semiconductor arrays
US5930279A · kind A · utility
48Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Apr 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4056
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A diode laser device includes a heat diffusing substrate made from a material that is a good conductor of heat, in one face of which is formed a system of parallel ribs and grooves, the ribs being identical and equidistant, and a plurality of semiconductor arrays incorporating the diodes and housed longitudinally in the grooves. The grooves have an at least approximately triangular cross-section joined to the substrate by one side and each semiconductor array is fixed flat to an oblique flank of one of the ribs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.