Method for fabricating MIS device having GATE insulator of GaS or gallium sulfide
US5930611A · kind A · utility
16Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 4, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is fabricated by the step of forming a gate insulation film of a GaS film on a compound semiconductor layer; the step of forming an inter-layer insulation film on the gate insulation film; the step of etching the inter-layer insulation film selectively with respect to the gate insulation film by the use of an etchant containing hydrogen fluoride and ammonium fluoride, the step of exposing a prescribed region of the gate insulation film; and the step of forming a gate electrode on the exposed gate insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.