Crystallogenesis device and process
US5932005A · kind A · utility
2Cited by
4References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 11, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Dec 11, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The material of the crystal (2) formed by solidification is deposited in a crucible (1), whose wall is perforated by two ducts for the injection of pressure at different heights (6, 7). A differential pressure is created between the two ducts, the pressure of the lower duct (7) being higher by a value roughly equal to the hydrostatic pressure of the remaining liquid (3), so that a clearance (5) is spontaneously formed between the crystal (2) and the crucible (1) and problems caused by differential thermal contractions on cooling are avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.