Patent · US Expired

Sensor with silicon strain gage

US5932809A · kind A · utility

14Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 17, 1998
Grant dateAug 3, 1999
Priority date
Expiry dateFeb 17, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0055
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A media-compatible sensing structure (210) that employs strain-sensing elements (222) formed in or on a silicon chip (212). The sensor (210) generally includes a metal body (214) having a diaphragm (216) and an edge (226) formed by an abrupt change in the thickness of the metal body (214) in a direction normal to the diaphragm (216). The silicon chip (212) is secured directly to the metal diaphragm (216) and has at least one strain-sensing element (222) aligned with the edge (226) of the body (214) in the direction normal to the diaphragm (216), such that movement of the diaphragm (216) induces strain in the silicon chip (212) that is localized at the strain-sensing element (222). The chip (212) preferably includes a groove (234) in its surface (212) facing the diaphragm (216) and between the strain-sensing element (222) and the metal body (214), such that strain induced in the chip (212) by movement of the diaphragm (216) is further concentrated in the region of the chip (212) containing the strain-sensing element (222). The chip (212) is preferably attached to the metal diaphragm (216) with a bonding material (236). To promote adhesion of the chip (212) to the diaphragm (216), th…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.