Field effect transistor loaded with multiquantum barrier
US5932890A · kind A · utility
4Cited by
1References
3Claims
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Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
Abstract
A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.