Semiconductor having enhanced acceptor activation
US5932899A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8181
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor having enhanced acceptor activation is disclosed. The semiconductor comprises a ternary compound having a non-abruptly varying composition that is uniformly doped. The modulation of the chemical composition leads to a variation of the valence band energy. The modulation of the valence band results in a strong enhancement of the acceptor activation. A method for making a semiconductor having enhanced acceptor activation comprises two steps. They are (1) forming a ternary compound semiconductor having a non-abruptly varying composition, and (2) uniformly doping said semiconductor with a dopant. These two steps may be conducted simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.